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By G.M. Crean,M. Locatelli,J. McGilp

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Ray model for determining the periodicity in V{z). 0 20 40 Fig. 4. Acoustic signature V(z) of SiC. 1 1 Velocity (m s ') VL Microechography H20 124001100 78001100 Low thickness Reflectometry 200 MHz H20 123001400 Acoustic signature 600 MHz H20 VS VL VS VL joint reflectometry and acoustic material signa­ ture, longitudinal and shear velocities in SiC could be determined. Similar values obtained on sintered a-SiC by reflectometry and acoustic material signature validate the use of these tech­ niques with regard to microechography.

3. Ray model for determining the periodicity in V{z). 0 20 40 Fig. 4. Acoustic signature V(z) of SiC. 1 1 Velocity (m s ') VL Microechography H20 124001100 78001100 Low thickness Reflectometry 200 MHz H20 123001400 Acoustic signature 600 MHz H20 VS VL VS VL joint reflectometry and acoustic material signa­ ture, longitudinal and shear velocities in SiC could be determined. Similar values obtained on sintered a-SiC by reflectometry and acoustic material signature validate the use of these tech­ niques with regard to microechography.

5 mm. In fact, for thin and deposited materials having high acoustic velocities, echoes reflected by the surface and the interface interfere with each other and make it impossible to determine the time of propagation in the material. g. SiC-SiC (no reflection occurs from the interface), and (2) for SiC-C since the acoustic signal at the interface is scattered by the substrate owing to the porosity of the graphite. For this reason the use of microechography is limited for thin layers; other methods could be more appropriate to achieve the results.

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Acoustic, Thermal Wave and Optical Characterization of Materials by G.M. Crean,M. Locatelli,J. McGilp


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